| 摘要 |
PURPOSE: To maximize the dielectric constant of a thin-film perovskite material, without maintaining a substrate at a high temperature by adding lead to this material. CONSTITUTION: The dielectric constant of a perovskite material increases below the queue temperature according, as the crystal grain size is decreased. Lead reduces the critical crystal grain size of the perovskite material. Therefore, the lead is added to an original perovskite material having an original critical crystal grain size, and then the layer of a lead-strengthened perovskite material having a mean crystal grain size smaller than the original critical crystal grain size is formed. Thus, the dielectric constant of this layer can be made to be higher than the dielectric constant of the original perovskite material, having a mean crystal grain size similar to the mean crystal grain size of this layer, and preferably, the resistance of this lead-strengthened material can be increased and/or the dielectric tangent can be reduced by doping it with an acceptor dopant. A structure on a substrate surface includes a conductive layer and the layer of this lead-strengthened perovskite material brought into contact with the conductive layer. |
