| 摘要 |
PURPOSE:To provide the title formation method of high dielectric constant thin film by a method wherein CaTiO3 layers as constant dielectric are flattened while increasing the specific dielectric constant in relation to said formation method used for dielectric film, etc., of DRAM capacitor. CONSTITUTION:In order to form high dielectric constant thin film of CaO.nTiO2 in an electronic part, CaO in less quantity than one molecular weight and TiO2 in specific content are alternately stacked. At this time, the stacking times are respectively specified to be X/P in CaO and nY/P in TiO2 where X, Y and P respectively represent the deposition times of one molecular weight of CaO, TiO2 and cycle stacking times. |
