| 摘要 |
PURPOSE:To prevent fluctuation in the resistance ratio of a plurality of polysilicon resistance film in the semiconductor device on which a plasma nitride film is formed on a plurality of polysilicon resistance films. CONSTITUTION:Metal wiring layers 5a and 5b are formed above a polysilicon resistance films 3a and 3b, and the overlap area ratio of the polysilicon resistance film 3a and the metal wiring layer 5a are made almost equal to the overlap area ratio of the polysilicon resistance film 3b and the metal wiring layer 5b.
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