发明名称 SEMICONDUCTOR LASER DIODE AND FABRICATION THEREOF
摘要 PURPOSE:To obtain a semiconductor laser diode in which thermal crosstalk is suppressed between light emitting regions in a semiconductor laser array without complicating the assembling process. CONSTITUTION:A heat sink 2 for semiconductor laser has such structure as a plurality of dielectric material layer 2a, 2b having high and low thermal conductivities, respectively, are laminated alternately in the arranging direction of a plurality of light emitting stripe regions 4a, 4b, 4c of a semiconductor laser to be mounted. A semiconductor laser chip 3 is mounted on the heat sink 2 such that at least one dielectric material layer 2b having low thermal conductivity is arranged between respective light emitting stripe regions.
申请公布号 JPH06112596(A) 申请公布日期 1994.04.22
申请号 JP19920284064 申请日期 1992.09.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIGIHARA KIMIO;WATANABE HITOSHI;KADOWAKI TOMOKO;NISHIGUCHI HARUMI;ISSHIKI KUNIHIKO
分类号 H01L23/373;H01L33/08;H01L33/64;H01S5/00;H01S5/024;H01S5/40 主分类号 H01L23/373
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