| 摘要 |
PURPOSE:To improve the reliability, yield, and light emitting efficiency of an InGaAsP-InP semiconductor light emitting element. CONSTITUTION:At least one or more p-type InGaAs layers 6 are formed in InGaAsP layers 5a and 5b. When the thickness of the layer 5b in contact with a p-side electrode 8 is reduced to about 0.1mum and the layer 5b is heat-treated at 450 deg.C after forming the electrode 8, the ohmic resistance of the electrode 8 can be reduced, because an alloying reaction takes place not only between the electrode 8 and layer 5b, but also between the electrode 8 and layer 5a. |
