发明名称 MANUFACTURING METHOD OF LIGHT EMITTING ARRAY
摘要 The manufacturing method comprises the steps of; growing a first crystal layer by LPE (liquid phase epitaxy) method and etching a portion of dielectric layer by chemicalvapor deposition or sputtering method; melting said first crystal layer by LPE method; re-growing a second crystal layer; and depositing metal on said second crystal layer and under said substrate to form electrodes. The advantage increase light output and solving difficulty in photolithography process of mesa structure.
申请公布号 KR940003438(B1) 申请公布日期 1994.04.22
申请号 KR19910015470 申请日期 1991.09.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DUK - HUI
分类号 H01L33/00;(IPC1-7):H01L33/00 主分类号 H01L33/00
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