发明名称 BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To provide a bonding wire, for semiconductor element use, wherein it enhances the strength of an Au wire by adding Pd, Pt, Rh, Ir, Os and Ru, it lowers the incidence of an A-point exfoliation in a high-temperature shelf test and it is extremely useful for a wire bonding method and a bump connecting method. CONSTITUTION:At least one kind out of Pd, Pt, Rh, Ir, Os and Ru is added to high-purity Au at 0.0003 to 0.1wt.%, at least one kind out of Sc, Y and rare- earth elements is added to it at 0.0001 to 0.005wt.%, one or more kinds out of Be, Ca, Ge, Ni, Fe, Co and Ag are added to it at 0.0001 to 0.05wt.%, and this mixture is melted and cast. Then, a grooved roll working operation is executed, an annealing treatment is executed in its halfway part, a wiredrawing operation is then executed, and a stress is removed sufficiently. Thereby, a bus having a wire diameter of 25mum is formed.
申请公布号 JPH06112259(A) 申请公布日期 1994.04.22
申请号 JP19920262221 申请日期 1992.09.30
申请人 TANAKA DENSHI KOGYO KK 发明人 ITABASHI KAZUMITSU;KUJIRAOKA TAKESHI
分类号 H01L21/60;C22C5/02;H01L23/48;H01L23/50 主分类号 H01L21/60
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