| 摘要 |
<p>PURPOSE:To stably build a high resistance layer of required length by forming a thin-film transistor of a polycrystalline silicon. CONSTITUTION:The first polycrystalline silicon 202, becoming an active layer, is deposited on a substrate 201, then patterned and thermally oxidized for forming a gate insulation film 203. By controlling thickness, the second polycrystalline silicon 204, becoming a gate electrode, is formed and P is doped by thermal diffusion, so that a mask pattern is formed using a positive resist. P ions are implanted and source and drain areas 206 and 207 are formed, and with a positive resist 205 as a mask, the second polycrystalline silicon 204 is etched. At this time, with first polycrystalline silicon between a gate electrode 208 and the drain area 207 as a high resistance layer 210, the etching is controlled so that its length is between 1-3mum. Thus, an inter-layer insulation film 211 is formed and annealed for activating impurities, resulting in improved characteristic of a thin-film transistor.</p> |
