Opto-elektronisches Halbleiterelement

摘要

The invention relates to an optoelectronic semiconductor component in the form of an electro-optical modulator with an integrated optical waveguide in the sphere of influence of a diode structure and with external electrical connections. In order to realize the high charge carrier densities required for the switching function, with relatively low switching currents at low power loss, the waveguide and the diode structure have in common a central silicon-germanium layer (2) of predetermined germanium content and on both sides of this central layer (2) a silicon coating (21, 22) or another silicon-germanium layer (3, 4) with relatively low germanium content. The silicon coatings (21, 22) or the other silicon-germanium layers (3, 4) are in each case of opposite conductivity type.