发明名称 SEMICONDUCTOR MEMORY DEVICES
摘要 The semiconductor memory device comprising a memory block, a low decoder, a memory block selecting decoder, and a word line selecting logic circuit, characterized in that the word line selecting logic circuit includes inversion means and switching means accomplishes high speed and high integration.
申请公布号 KR940003400(B1) 申请公布日期 1994.04.21
申请号 KR19910014873 申请日期 1991.08.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, HUI - CHOL;HAN, SONG - JIN;KIM, BYONG - JIN
分类号 G11C11/41;G11C8/12;G11C11/401;G11C11/407;(IPC1-7):G11C11/40 主分类号 G11C11/41
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