Integrierte Halbleiterdiodenlaser und Photodiodenstruktur.
摘要
<p>Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.</p>
申请公布号
DE68909408(T2)
申请公布日期
1994.04.21
申请号
DE1989609408T
申请日期
1989.07.27
申请人
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US
发明人
BUCHMANN, PETER LEO, DR., CH-8135 LANGNAU AM ALBIS, CH;HARDER, CHRISTOPH STEPHAN, DR., CH-8038 ZURICH, CH;VOEGELI, OTTO, DR., CH-8803 RUESCHLIKON, CH