| 摘要 |
PURPOSE:To isolate a junction and to omit the step of forming an edge face in the manufacture of a P-N junction type solar cell in which a polycrystalline silicon wafer is used as a substrate by forming newly a P-N junction between a front surface electrode and a rear surface electrode. CONSTITUTION:A P-type polycrystalline silicon substrate 1 is employed (a), an N<+> type layer 2 is formed to form a P-N junction 3 (b). Then, a rear surface electrode aluminum paste 4 and junction isolating aluminum paste 5 are simultaneously printed on the N<+> type layer of the rear surface side (c). Then, a heat treatment is executed. The junction isolating aluminum is diffused with the paste 5 in the substrate by the heat treatment to form a P<+> type layer 8, and a P-N junction 9 which operates as a junction isolation is formed. Simultaneously, the rear surface electrode aluminum paste 4 is also diffused in the substrate to become a rear surface aluminum electrode 7 (d). That is, the junction can be isolated simultaneously upon the formation of the rear surface electrode, thereby omitting the edge face forming step. |
