| 摘要 |
PURPOSE:To surely form a crystalline thin film having a specified orientation with good reproducibility by providing a crystalline film having a preferential orientation property on the upper and lower layers of a crystallizing material to which an orientation is to be imparted. CONSTITUTION:An amorphous silicon oxide film 4 is formed on a silicon wafer 2, and a platinum film 14 as a lower control film having a preferential orientation property is formed thereon. A sol-gel precursor as the crystallizing material is applied on the platinum film 14 to form a precursor layer 10 (e.g. a PZT precursor layer). A platinum film 12 as an upper control film having a preferential orientation property is then formed on the precursor layer 10. The precursor layer 10 is then heat-treated and crystallized to form a crystalline thin film 20 such as a PZT crystalline thin film. Consequently, since the precursor layer 10 is controlled by the platinum films 12 and 14 and crystallized, a specified orientation is imparted to the crystalline thin film 20, and a sufficiently large crystallite is obtained. |
