发明名称 |
Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
摘要 |
A process flow for fabricating a self-aligned stacked gate EPROM cell that uses a CVD tantalum oxide film to replace ONO as a control gate dielectric. Tungsten replaces polysilicon as the control gate. Both the dielectric deposition and cell definition steps of the process flow are performed in a back-end module to improve dielectric integrity in the memory cells by minimizing high temperature exposure of the tantalum oxide film.
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申请公布号 |
US5304503(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19920959665 |
申请日期 |
1992.10.13 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YOON, EUISIK;BERGEMONT, ALBERT M.;KOVACS, RONALD P. |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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