发明名称 |
Method for depositing a film |
摘要 |
An apparatus for depositing a film at atmospheric pressure and a method used for this formation are offered. Radicals are produced inside a space in which an electric discharge is induced. This space is shrouded in a purge gas to isolate the space from the outside air, for preventing the radicals traveling to the surface of a substrate from being affected by the outside air. A magnetic field and a bias voltage are made to act on the produced plasma, so that the radicals can reach the substrate surface with greater ease. The arriving radicals promote the formation of the film on the surface of the substrate.
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申请公布号 |
US5304407(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19930022759 |
申请日期 |
1993.02.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAYASHI, SHIGENORI;YAMAZAKI, SHUNPEI |
分类号 |
C23C16/50;C23C16/27;C23C16/44;C23C16/452;C23C16/455;(IPC1-7):B05D3/06 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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