| 摘要 |
A dynamic random access memory device comprises a matrix of memory cell pairs each consisting of two memory cells formed in an active area, a plurality of word line pairs provided in association with the columns of the memory cell pairs, and a plurality of first bit lines respectively paired with a plurality of second bit lines for forming a plurality of bit line pairs, and every adjacent two rows of the memory cell pairs are alternately coupled to the first and second bit lines of one of the bit line pairs, wherein the active area is formed into a generally rectangular shape having a longitudinal direction obliquely extending with respect to the longitudinal direction of the associated first or second bit line so that a vacancy between two adjacent memory cell pairs is minimized without sacrifice of simple pattern of a field oxide film.
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