| 摘要 |
The present invention is directed to a pulse generating circuit for use in a semiconductor device, in which P type MOS transistors are connected in parallel, series connected N type MOS transistors are connected in series to the P type MOS transistors in a parallel manner, the potential of a node is provided to the P type MOS transistor and the N type MOS transistors, while the potential of a node is provided to the P type MOS transistor and the N type MOS transistors, so that a one shot pulse having a substantially identical waveform can be generated either when an input clock (phi)IN changes its level from an "H" level to an "L" level or from the "L" level to the "H" level.
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