Apparatus and method for determining wafer temperature using pyrometry

摘要

In a RTP reactor where wafer temperature is measured by a pyrometer assembly (32), a pyrometer assembly (50) is further provided to measure the temperature of the quartz window (30) that is situated between the wafer pyrometer assembly (32) and the wafer (16) that is being processed. During the calibration procedure (100, 120) where a thermocouple wafer is used, the measurements from the wafer pyrometer assembly (32) and the window pyrometer assembly (50) are calibrated, and pyrometer measurements and thermocouple measurements are collected and compiled into calibration tables. During actual RTP reactor operation, the data from the calibration tables and current wafer and window pyrometer measurements are used to compute corrected wafer temperature(s). The corrected wafer temperature(s) is/are then used to control the intensities of the heating lamps according to the wafer processing heating schedule.