发明名称 |
Substrate voltage generator and method therefor in a semiconductor device having internal stepped-down power supply voltage |
摘要 |
A semiconductor device having an internal voltage down converter includes a circuit operating with an externally applied power supply voltage, a circuit operating with an internal stepped-down voltage as an operation power supply voltage, and substrate voltage generators for generating a substrate bias voltage according to a state of the internal stepped-down voltage. The present invention makes it possible to stably apply a substrate voltage corresponding to an operation voltage to the substrate region.
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申请公布号 |
US5304859(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19920974840 |
申请日期 |
1992.11.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ARIMOTO, KAZUTAMI |
分类号 |
G05F3/20;G11C11/408;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H03F1/30;H03F3/345;(IPC1-7):H03K3/01 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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