发明名称 Substrate voltage generator and method therefor in a semiconductor device having internal stepped-down power supply voltage
摘要 A semiconductor device having an internal voltage down converter includes a circuit operating with an externally applied power supply voltage, a circuit operating with an internal stepped-down voltage as an operation power supply voltage, and substrate voltage generators for generating a substrate bias voltage according to a state of the internal stepped-down voltage. The present invention makes it possible to stably apply a substrate voltage corresponding to an operation voltage to the substrate region.
申请公布号 US5304859(A) 申请公布日期 1994.04.19
申请号 US19920974840 申请日期 1992.11.16
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ARIMOTO, KAZUTAMI
分类号 G05F3/20;G11C11/408;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H03F1/30;H03F3/345;(IPC1-7):H03K3/01 主分类号 G05F3/20
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