发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce current consumption and to stably decrease and supply a power supply voltage from outside by using a transistor as a voltage decreasing means and driving the transistor by applying a reference voltage on a prescribed level to the gate of the transistor. CONSTITUTION:As a voltage decreasing means for decreasing a power supply voltage Vcc to a prescribed internal voltage Vci, a transistor Q connected between the line of the power supply voltage Vcc and the generation node N of the internal voltage Vci is used. By applying a reference voltage Vss on a prescribed level to the gate of the transistor Q, the decreased internal voltage Vci is taken out of the generation node of the internal voltage. In such a constitution, in a semiconductor device with built-in circuit for decreasing a power supply voltage from outside, the current consumption is reduced and the internally decreased voltage is stably supplied. It is desirable that the transistor Q is a depression type N channel transistor.</p>
申请公布号 JPH06103763(A) 申请公布日期 1994.04.15
申请号 JP19920248023 申请日期 1992.09.17
申请人 FUJITSU LTD 发明人 AKAOGI TAKAO
分类号 G11C11/407;G11C11/408;G11C16/06;G11C17/00;H03K19/00;(IPC1-7):G11C11/407 主分类号 G11C11/407
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