| 摘要 |
PURPOSE:To high integrate a semiconductor integrated circuit device in the laminated layer direction. CONSTITUTION:Within this semiconductor integrated circuit device, the first insulating film 2a is provided beneath an inner lead 1 and then the first semiconductor chip 3a is bonded onto the rear surface of the film 2a, on the other hand, the second insulating film 2b is provided above the inner lead 1 and then the second semiconductor chip 3b is bonded onto the surface of the film 2b. |
