| 摘要 |
<p>PURPOSE:To improve the chemical stability of the low-resistance metal of the lower layer of a wiring structure consisting of the lower layer wirings of the low-resistance metal and upper layer wirings by interposing an oxidized film formed by oxidizing the metal of the lower layer between the lower layer and the upper layer. CONSTITUTION:An active matrix substrate is disposed with scanning wires 12 and signal wires on an insulating substrate 11 and pixel electrodes are provided therebetween. The oxidized film 12d is interposed between the lower layer 12a constituting the scanning lines 12 and the upper layer 12c thereof. Aluminum, molybdenum, niobium, tungsten, chromium, etc., are used as the low-resistance metal of the lower layer 12a. Tantalum, titanium, indium oxide, etc., are used as the metal of the upper layer 12c. The oxidized film 12b of the low-resistance metal has an electrical conductivity and is formed by a method of anodizing the low-resistance metal with sulfuric acid, phosphoric acid, oxalic acid, etc., or a method of thermally oxidizing the low-resistance metal with weakly acidic or weakly alkaline atmosphere contg. oxygen., etc. The improvement of the electrical conductivity by treating the oxidized film with an electrolyte or fused salt is possible.</p> |
