| 摘要 |
<p>PURPOSE:To arrange electron-beam generating elements two-dimensionally by employing emission of bound charges due to the polarization inversion of a ferroelectric substance as the electron-beam generating element for the purpose of simultaneously satisfying image resolution, time-dependent responsiveness, the angle of visibility, self-emission properties, power consumption and costs. CONSTITUTION:An electron-beam generating cell 24 has a switching transistor 25 and an electron-beam generating element 22. In the electron-beam generating cell 24, a source of the switching transistor 25 is connected to one 18a of the upper electrodes of the electron-beam generating element 22. The switching transistor 25 has a word line WL connected to the gate thereof and a drive line DL connected to the drain thereof. A bit line BL is connected to the other upper electrode 18b of the electron-beam generating element 22.</p> |
