| 摘要 |
PURPOSE: To form an element whose conductivity and pinch off voltage are improved, in a short crystal growing time, for an HFETS having a monoatomic sealing layer. CONSTITUTION: An HFET has a channel region 13 on the uppermost layer of a superlattice buffer 12. On the superlattice buffer 12, a buffer layer and a sufficiently thin quantum-well layer that generates isolation with a wide energy band in a quantum well are formed alternately, and a channel region 13 is formed of 1-5 monomolecular layer (s), having a band gap different from that of the quantum well and the channel region 13.
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