| 摘要 |
<p>PURPOSE:To obtain the thin film transistor(TFT) matrix which provides high display luminance without decreasing the occupation area of a pixel electrode by a TFT by forming the TFT on an opening formed in a gate bus line. CONSTITUTION:In the gate bus line 1, the opening 10 which is thin and long is formed nearby one side along the extension direction of the gate bus line, and the part between the opening 10 and one side of the gate bus line 1 is utilized as a gate electrode 30. A gate insulating film 7 is formed on the gate bus line 1 provided with the opening 10 and an active layer 8 consisting of an amorphous silicon layer is formed on the gate electrode 30 across the gate insulating film 7. On the active layer 8, a source electrode 4 and a drain electrode 5 which is connected to a drain bus line 2 are formed. In this constitution, the arrangement and area of a pixel electrode 6 connected to the source electrode 4 can be set without restrictions of the structure of the TFT.</p> |
