| 摘要 |
<p>PURPOSE:To suppress a leak current in an offset area and reduce the current consumption of the active matrix type liquid crystal display device by forming an ion low-density layer (LDD structure) or the offset area at the part where the drain area and channel area of an MOS type thin film transistor(MOS type TFT) constituting a pixel and its peripheral driving circuit contact each other. CONSTITUTION:A silicon semiconductor layer is formed on a quartz substrate 1-1 and a gate insulating film 1-6 is formed. On the insulating film 1-6, a gate electrode 1-7 is formed to constitute a top gate type planar structure. The ion low-density layer or offset layer 1-5 is provided between a channel conductive layer 1-2, and a source area 1-3 and a drain area 1-4 provided in the semiconductor layer. Thus, the MOS type TFT is formed in LDD structure or offset gate structure to increase the offset resistance, thereby improving electric charge holding performance.</p> |
