MANUFACTURE OF SEMICONDUCTOR STRAIN SENSOR

摘要

PURPOSE:To provide a method of manufacturing a title sensor which can obtain a sufficient strength during formation of a thin beam. CONSTITUTION:A P<+> diffused layer 33 as a strain detecting piezoresistance layer is formed at a predetermined region in the main surface of a silicon wafer 28. A predetermined region of the silicon wafer 28 is removed by anisotropic etching from the rear side of the silicon wafer 28 to form a thin- walled part 61 having the P<+> diffused layer 33. Further, the thin-walled part 61 is partially removed by dryetching with CF4 from the main surface side of the silicon wafer 28 to form a beam.