| 摘要 |
PURPOSE: To form an insulating film, having flat plane over the entire plane of a semiconductor wafer by forming a dummy pattern for compensating global step. CONSTITUTION: A first insulating film 32 is wet-etched or dry-etched by using a photoresist pattern 33 as an etching mask, and a first insulating film pattern 32', which is a dummy pattern for compensating a step between a dense step area I1 and a global step area I2 of a lower structure, is formed on a global step area I2 . Then, on the entire plane of a semiconductor substrate 300 whereupon a pattern 31 and the first insulating film pattern 32' are formed, a reflowable insulating material, for instance BPSG is applied, and a second insulating film 34 is formed with a thickness of 3000-5000 Å. Thus, a stable metal wiring, wherein notching phenomenon and metal wiring disconnection due to the global step are not generated is formed, and the process yield and the electrical characteristics of a semiconductor device is markedly improved. |
