| 摘要 |
<p>PURPOSE:To contract a gas filling time and reduce a cost, by injecting the gas into a container performing at least once the changeover of gas filling modes with respect to a plurality of gas filling modes for injecting the gas into the container. CONSTITUTION:A wafer to be subjected to a dry etching processing is fixed in a chamber 1, and the chamber 1 is sealed. Then, a closing valve 12 is released by a sequencer 13, and the air, etc., in the chamber 1 are sucked by a vacuum pump 5 via a suction port 1d. When the internal vacuum state of the chamber 1 becomes a predetermined one, the dry etching processing is performed. Thereafter, an inert gas F for destroying the vacuum state is injected into the chamber 1 from a blow-off port 1c. At this time, initially, the inert gas F is injected in a constant-flow-rate mode, and when the pressure in the chamber 1 becomes a predetermined value, the constant-flow-rate mode is changed over into a time-proportional mode or into a constant-draft mode. thereby, since a gas filling time can be contracted without increasing the number of upflung particles, the cycle time of the whole of a semiconductor manufacturing process can be contracted.</p> |
