| 摘要 |
PURPOSE: To provide an amorphous silicon photocell, provided with an (n) layer which is provided with a 'valid' optical band gap wider than that of a conventional type (n)-layer, without reducing the conductive characteristic of the (n)- layer. CONSTITUTION: In a photocell, formed of a rear surface contact point layer 25 formed on a wide-band gap (n)-type layer 30 formed on a (i) layer 18 of amorphous silicon formed on a (p)-type layer 16 formed on a front surface conductive layer 14 which formed on a transparent substrate 12, a layer 30 is in a sandwich structure constituted of a first 21, a second 22 and a third 23 (n)-layers, formed by alternately being piled up with each other, and the layer 22 is provided with on optical-band gap which is wider than the optical band gap of the 21 and 22 (n)-type layers. |
