| 摘要 |
<p>PURPOSE:To prevent generation of inner stress by a simple process of manufacturing a semiconductor device which employs a mesa structure by forming a high resistant region showing electric insulativeness by ion implantation to a mesa side face after a semiconductor substrate is formed in a mesa type. CONSTITUTION:A metal electrode 4 is patterned on a P region layer 1. Next, a resist 8 is patterned so as to coat the metal electrode 4. The GaAs substrate is etched with the resist 8 as the mask to form into a mesa type. After the resist 8 is removed, born ions are implanted into the mesa side face by ion implantation to form a high resistant implanted layer 9 which is a high resistant region showing electric insulativeness. This process can provide a mesa type semiconductor device of high reliability which neither includes inner stress due to a difference in coefficient of thermal expansion nor forms a part where current flows concentratedly because of strains.</p> |
