发明名称 A tunnel diode and a process for its production
摘要 An alloy used in making semi-conductor devices (see Division H1) consists of tin containing 0.1-2% by weight zinc. Other alloys suggested are alloys of tin with up to 10% by weight cadmium, of indium with a total of up to 10% by weight of zinc and/or cadmium, and of tin with up to 10% by weight of germanium, silicon, sulphur, selenium, or tellurium. Specification 757,672 is referred to.
申请公布号 GB953198(A) 申请公布日期 1964.03.25
申请号 GB19600042196 申请日期 1960.12.07
申请人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT 发明人
分类号 H01L21/00;H01L21/24;H01L29/00;H01L29/36;H01L29/88 主分类号 H01L21/00
代理机构 代理人
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