发明名称 MASK FORMING METHOD
摘要 PURPOSE:To selectively form a flawless deposited film by bringing a processing soln. contg. an aq. soln. supersaturated with a film material into contact with a substrate with a resist pattern formed on its surface to deposit a film on the exposed surface of the substrate and shielding the light sensitizing the resist until deposition is finished after the resist pattern is formed. CONSTITUTION:A resist pattern 13 is formed on the surface of a substrate 11, and a processing soln. contg. an aq. soln. supersaturated with a film forming material is brought into contact with the substrate 11 with the resist pattern 13 formed on its surface to selectively deposit a film 14 on the exposed surface of the substrate 11. The light sensitizing the resist is shielded until deposition is finished after the pattern 13 is formed. The light is shielded, for example, by conducting deposition in a dark room or by conducting deposition under the illumination of the light other than the resist sensitizing light.
申请公布号 JPH06102657(A) 申请公布日期 1994.04.15
申请号 JP19920275124 申请日期 1992.09.18
申请人 TOSHIBA CORP 发明人 KAWANO KENJI;HASHIMOTO KOJI;ITO SHINICHI;HORIOKA KEIJI
分类号 G03F1/30;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/30
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