An oxide removal method.

摘要

A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining nitride-covered thin oxide, without subjecting the surface to significant over-etching and thus avoiding degredation of the surface of the semiconductor body. The thick oxide is first etched for a period of time so that a portion of the thick oxide remains, and has a thickness comparable to that of the thin oxide. The nitride covering the thin oxide is next removed without appreciably etching either the remaining portion of the thick oxide or the thin oxide. Finally, the thin oxide and the remaining portion of the thick oxide are removed, without appreciably over-etching the surface of the semiconductor body.