| 摘要 |
<p>A method for producing a T-shaped gate electrode of a semiconductor device includes, forming an insulating film (2) on a semiconductor substrate (1) and forming an aperture (2a), depositing a metal thin film (3), forming a first photoresist film on the entire surface of a wafer and removing a portion of the photoresist film excepting the other portion of photoresist film (4) which remains in the aperture (2a) by etchback, forming a second photoresist film on the entire surface of the wafer, patterning the second photoresist film and forming a photoresist aperture pattern (5) of which central portion of an aperture (5a) is disposed on a metal film (3b) formed along a sidewall (2b) of the insulating film (2), etching away a portion of the metal film (3) over an end of the insulating film (2), using the photoresist film (4) and the photoresist aperture pattern (5) as a mask, depositing a gate metal (6) on the entire surface of the wafer and removing the first photoresist film (4), the photoresist aperture pattern (5) and the gate metal (6) deposited on the photoresist aperture pattern (5) by lift off, and forming a T-shaped gate electrode (6a) by etching away metal films (3) remaining on the semiconductor substrate (1) and the insulating film (2). Therefore, the T-shaped gate electrode of which gate length is shortened is produced. <IMAGE></p> |
