| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
According to the present invention, a lower electrode is formed on a semiconductor substrate and overgrows upward to form one electrode of a capacitor having a mushroom-shaped section. An insulation film is formed so as to at least cover the lower electrode. An upper electrode is formed so as to oppose the lower electrode and to cover at least the insulation film.
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| 申请公布号 |
US5302844(A) |
申请公布日期 |
1994.04.12 |
| 申请号 |
US19930015676 |
申请日期 |
1993.02.09 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIZUNO, TOMOHISA;SAWADA, SHIZUO |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/92;H01L29/94;(IPC1-7):H01L27/02;H01L29/68;H01L29/78 |
主分类号 |
H01L27/04 |
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