| 摘要 |
According to a method for producing semiconductor chips, grooves serving as dicing lines are formed in a front surface of a semiconductor wafer, the semiconductor wafer is ground from the rear surface to a prescribed thickness, leaving portions of the wafer opposite the grooves, a feeding layer is formed on the ground rear surface of the wafer, a metal layer for heat radiation is formed on the feeding layer, a dicing tape is applied to the metal layer, and the wafer and the feeding layer are diced along the dicing lines, resulting in a plurality of semiconductor chips. Therefore, the strength of the wafer is increased because portions of the wafer remain at the dicing lines, preventing curvature of the wafer. When a plurality of metal layers for heat radiation are selectively formed on the feeding layer except for regions opposite the dicing lines, since only thin portions of the wafer and the feeding layer are present at the dicing lines, burrs produced during dicing are reduced and an adequate junction is achieved in a subsequent die-bonding process.
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