发明名称 |
CVD diamond by alternating chemical reactions |
摘要 |
The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula CnXm and then with a gas having the formula ClZp. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z-X bond is stronger than the C-X bond and also is stronger than the C-Z bond. In the formulas, n, m, l, and p are integers. If CnXm and ClZp do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.
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申请公布号 |
US5302231(A) |
申请公布日期 |
1994.04.12 |
申请号 |
US19920956817 |
申请日期 |
1992.10.05 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
BOVENKERK, HAROLD P.;ANTHONY, THOMAS R.;FLEISCHER, JAMES F.;BANHOLZER, WILLIAM F. |
分类号 |
C23C16/26;C23C16/27;C30B25/02;C30B29/04;(IPC1-7):C30B25/00 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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