发明名称 Distributed feedback semiconductor laser device and a method of producing the same
摘要 A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove, and a diffraction grating formed in the bottom of the stripe groove. The current blocking structure is formed over an active layer for laser oscillation, and it includes an etch stop layer against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove is controlled by the thickness of the optical guiding layer, enabling oscillation of the fundamental transverse mode.
申请公布号 US5303255(A) 申请公布日期 1994.04.12
申请号 US19930085129 申请日期 1993.06.29
申请人 SHARP KABUSHIKI KAISHA 发明人 KUDO, HIROAKI;TAKIGUCHI, HARUHISA;INOGUCHI, KAZUHIKO;NAKANISHI, CHITOSE;SUGAHARA, SATOSHI
分类号 H01S5/12;H01S5/20;H01S5/223;(IPC1-7):H01S3/08;H01S3/19 主分类号 H01S5/12
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