| 摘要 |
<p>PURPOSE:To easily form an emitter tip hole with good workability by using a consumable layer film having a hole as a mask, and applying an anisotropic etching process to a gate film and an insulation film in such a way as undercut relative to the hole. CONSTITUTION:An insulation film 2, a gate film 3 and a consumable layer film 4 are stacked in order on a silicon substrate 1 used as a cathode layer in common. Thereafter, a circular pattern 6 corresponding to a gate opening is formed on a resist film 5 laid on the consumable layer film 4, and this film 4 is etched with the resist film 5 used as a mask. Then, the film 4 is used as a mask for applying an anisotropic etching process to the gate film 3 and the insulation film 2 in such a way as undercut relative to the hole of the film 4, thereby forming a hole 7 for making an emitter tip. Then, the emitter tip is formed, according to an emitter tip formation process with vapor deposition and a lift-off process as in an ordinary method, thereby manufacturing a cathode device.</p> |
