| 摘要 |
<p>PURPOSE:To increase an opening rate and to avoid influencing the operation of a thin-film transistor(TFT) by insulating and separating a first electrode and a second electrode provided via an insulating film from the TFT and fixing and connecting these electrodes to a specified bias potential. CONSTITUTION:A GND wiring of a capacitor 18 is freshly provided and the writing and holding of basic data are made the same as heretofore. The GND potential of this case signifies the specified bias voltage and a line 27 is used as the second electrode of a charge holding capacitor regardless of a bias level or signal level. The area of the part where this second electrode and the first electrode constituting a part of pixel electrodes overlap is made smaller than the area of the pixel electrodes of the part where these electrodes do not overlap. The opening rate of the cell is, therefore, not influenced. This second electrode is insulated and separated from the TFT and, therefore, its operation is not influenced.</p> |
