| 摘要 |
PURPOSE:To improve brightness by improving light output efficiency. CONSTITUTION:A semiconductor light emitting element is composed of a light emitting layer 5, which is formed on a semiconductor substrate 2 and is formed of InGaAl P mixed crystal, electrodes 1 and 10 which supply the light emitting layer 5 with current, reflecting layers 3 and 9, which are formed between the semiconductor substrate 2 and the light emitting layer 5 and directly under the electrode 10 on the light output side by alternately laminating different composition III-V compound layers so as to reflect reflecting light from the light emitting layer 5, and a current block layer 7, which is formed between the reflecting layers 3 and 9 and has the conductivity type opposite to the adjacent semiconductor layers 6 and 8 so as to suppress current from flowing into the light emitting layer 5 at the bottom part of the electrode 10 on the light output side. |
