| 摘要 |
PURPOSE:To obtain a compound semiconductor substrate containing In and P suited to the formation of a quantum fine line construction by providing {100} principal planes as step upper planes and forming molecular layer steps having predetermined smoothness and step front side planes in a stepped form with a periodicity within a predetermined range in [011] direction. CONSTITUTION:A material substrate 1 comprising InP is prepared, which is mechanically processed in such a manner that the plane sloped only by 1 deg. from (100) plane to <011> direction can become the reference plane. On this reference plane, InP, InGaAs or InGaAsP is subjected to crystal growth, and a buffer layer 2 is formed. By doing this, molecular layer steps having (100) planes as step upper planes for principal planes and step front side planes with predetermined smoothness can be formed in a stepped form having a periodicity within a predetermined range in <011> direction can be formed. In this way, a barrier layer 3 consisting of InP, a quantum well layer 5 consisting of InGaAs and a barrier layer 6 consisting of InP are sequentially formed on the buffer layer 2. By doing this, quantum fine line can be obtained on the substrate. |
