| 摘要 |
PURPOSE:To provide a light emitting element formed of silicon, especially an light emitting element which emits light by charge injection using p-n junction. CONSTITUTION:An light emitting element 1 is formed of non-crystal silicon carbon which contains p-type fine crystal (muc-SiC) 11, a porous silicon layer 12a, a amorphous silicon carbon layer 13 which contains n-type fine crystal and ITO 14 which is a transparent electrode, and metal 18 is formed on the bottom plane of the muc-SiC 11. The light emitting element 1 is adhered on a glass substrate 21, whereupon the ITO 14 is formed, by conductive adhesive 23, for example, silver paste. Since an electron and a hole are permitted to enter into the light emitting layer by the lower bias voltage than the bias voltage of the conventional light emitting element, the element emits light by the lower operation voltage compared with the conventional light emitting element and brightness is improved. |
