发明名称 |
STOCKING METHOD OF SILICON WAFER |
摘要 |
<p>PURPOSE:To increase degree of freedom in device process while retarding growth of spontaneous oxide by stocking a cleaned silicon wafer in an enclosed container. CONSTITUTION:A cleaned silicon wafer is stocked in an enclosed. container. For example, a mirror polished silicon wafer is cleaned with HF cleaning liquid and then stocked in an enclosed container. HF cleaning is performed such that the silicon wafer is immersed in aqueous solution of 1% hydrofluoric acid for several tens seconds under room temperature. The silicon wafer is stocked in a plastic enclosed container of 5l volume in a clean room (atmosphere) with the inner temperature and humidity of the enclosed container being set, respectively, at 25 deg.C and 50%. When the silicon wafer is stocked in an enclosed case spotaneous oxide grows by 1Angstrom upon elapse of 24 hours, whereas when the silicon wafer is cleaned under same conditions and stocked in an open clean room spontaneous oxide grows by 6Angstrom upon elapse of 24 hours.</p> |
申请公布号 |
JPH0697138(A) |
申请公布日期 |
1994.04.08 |
申请号 |
JP19920270871 |
申请日期 |
1992.09.14 |
申请人 |
MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS SHILICON CORP |
发明人 |
OKADA CHIZUKO;SAKURAI MARI;TATSUTA JIRO;SHINGYOUCHI TAKAYUKI;MORITA ETSURO |
分类号 |
H01L21/304;H01L21/673;H01L21/68;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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