| 摘要 |
PURPOSE:To restrain the diffusion of impurities which form a deep level to an active layer, form a regrowth interface of excellent quality, and reduce inner quantum effect and leak current. CONSTITUTION:In a buried type semiconductor laser wherein the side surface of an active region is buried by current constriction, the following are provided; an N-type InP clad layer 18 formed on an N-type InP substrate 11, an InGaAsP active layer 17 formed in a stripe type on the clad layer 18, and a P-type InP clad layer 16 formed so as to cover the side surface and the upper surface of the active layer 17. A mesa stripe is formed by selectively etching the clad layers 16, 18 and has a stripe of the active layer 17 in the inside. An Fe-doped high-resistance layer 12 is buried and formed on the side surface of the mesa stripe. |
