| 摘要 |
<p>PURPOSE:To form a microcrystal silicon layer as a semiconductor layer without incurring the drop of the insulation of an anode oxide film by electrically connecting a source electrode and a drain electrode to the semiconductor layer of microcrystal silicon containing hydrogen, and then, covering the exposed section with an insulating protective film. CONSTITUTION:A semiconductor layer 40 is constituted of the aggregate of fine crystal silicon or an amorphous silicon layer whose one part is microcrystallized. When glow discharge is made, using SiH4 gas being diluted with a large quantity of hydrogen, the obtained layer gets in the condition that microcrystal silicon is scattered in island shape in the amorphous silicon layer. Microcrsytal silicon increases in order by growing it as occasion demands, and the whole shifts to a polycrystal substance. For this TFT, Si3N4 is stacked as a protective film 70 by CVD method, and the semiconductor layer 40 is coated. This protective film 70 not only protects the microcrystal silicon layer but also depletes the surface 80 of the rear of the semiconductor layer 40, whereby it reduces the leak current in off condition and improves the property of TFT.</p> |
