| 摘要 |
PURPOSE:To provide the method for formation of patterns using a phase shift mask which is applicable even to the patterns with which the application of a phase shift technique is heretofore not possible, allows the application to the patterns with which the disposition of sub-patterns as phase shift parts is heretofore not possible and can form the high-resolution patterns regardless of pattern shapes. CONSTITUTION:Exposure is executed at least twice in this method. The exposure of either one time is the exposure using the phase shift mask and the exposure of at least the other one time is the exposure for compensating the light quantity in the phase shift boundary part (the part at the phase boundary of patterns P3 where the light quantity is insufficient) of the phase shift mask. This method for formation of the patterns forms the patterns of <=2.4Xlambda/NA inter-pattern distance on a substrate by using the phase shift mask. The exposure of either one time of at least two times of the exposure of this method is the exposure using the phase shift mask. |
