| 摘要 |
PURPOSE:To achieve that a light intensity corresponding to a light-shielding part in a light-intensity distribution curve is expanded in a low part by a method wherein the thickness of a light-shielding body pattern is made thick so as to transfer and form a pattern closest to a design size. CONSTITUTION:A light-shielding body pattern 2 for a semiconductor integrated circuit or the like is formed of a light-shielding metal on a substrate 1 through which a beam of illumination light used for an exposure is transmitted. The thickness of the light-shielding body pattern 2 is set at (t). The thickness (t) of the light-shielding body pattern is made fairly thicker than the thickness of a light-shielding body pattern in a reticle or a mask in conventional cases. A region in which the thickness (t) of the light-shielding body pattern 2 in the reticle or the mask may be the whole region of the reticle or the mask or one part of it. Thereby, a change in the size of a transfer pattern with reference to a change in an exposure amount, i.e., a light intensity, becomes smaller than in a case where the thickness of the light-shielding body pattern in conventional cases is thin, and the stability of the size of the transfer pattern with reference to the change in the exposure amount is increased. |
