| 摘要 |
PURPOSE: To obtain a semiconductor/organic light-emitting diode, in which efficiency is improved, an operating voltage is lowered and reliability is increased by a method, wherein a width of a forbidden band of a semiconductor material is wider than that of an electric fluorescent light-emitting material. CONSTITUTION: A diode 10 contains a layer 12 of an electric fluorescent light- emitting organic material, a conjugate polymer such as other known material, and a hole-carrier material operating so as to emit lights, if excited appropriately. The diode 10 further contains a layer 14 of a semiconductor material having a greater width of an energy forbidden band than that of the electric fluorescent light-emitting material. The layer 14 is disposed above the layer 12 and a junction part is formed therebetween, and a layer 16 of a metal contact material is disposed on a reverse side of the layer 14. A layer 18 of an optically transparent electric conductor is disposed on a reverse side of the junction part with the layer 14 on a side of the layer 12. The layer 18 is made of a material, such as indium tin oxide(ITO) which is utilized for a large number of applications, such as electric contact as having transparency with respect to optical waves. |
